, ij na. 20 stern ave springfield, new jersey 07081 u.s.a. uhf power transistor telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 BLW80 description n-p-n silicon planar epitaxial transistor intended for transmitting applications in class-a, b or c in the u.h.f. and v.h.f. range for nominal supply voltages up to 13,5 v. the resistance stabilization of the transistor provides protection against device damage at severe load mismatch conditions. the transistor is housed in a v4" capstan envelope with a ceramic cap. quick reference data r.f. performance up to th = 25 c in an unneutralized common-emitter class-circuit. mode of operation c.w. c.w. vce v 12,5 12,5 f mhz 470 175 pl w 4 4 gp db > 8,0 typ. 15,0 n % > 60 typ. 60 zi n 2,1 +j2,3 2,0-j2,2 yl ms 57-j56 51 -j48 pin configuration pinning-sot122a. top view fig.1 simplified outline. sot122a. pin 1 2 3 4 description collector emitter base emitter product safety this device incorporates beryllium oxide, the dust of which is toxic. the device is entirely safe provided that the beo disc is not damaged. nj semi-conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use isii semi-conductors encourages customers to verify that datasheets are current before placing orders. j%?*??_* am4?
ratings limiting values in accordance with the absolute maximum system (iec 134) collector-emitter voltage (vbe = 0) peak value collector-emitter voltage (open base) emitter-base voltage (open collector) collector current (d.c.) collector current (peak value); f > 1 mhz total power dissipation (d.c. and r.f.) up to tmb = 25 c storage temperature operating junction temperature 10 (a) 10 ' tmb - 25 "c :th = 70 10 vce(v) fig.2 d.c. soar. mrf (w) c vcesm max 36 v vceo max 17 v vebo max 4 v ic max 1 a icm max 3 a ptot max 17 w tstg -65 to +150 "c tj max 200 'c mgps3s \ |__ r.f. power dissipation i 1 vce<165v .' f>1mhz short time operation"""""- -?^_ during mismatch . . ,^^~-?^ , | derate by ^- ??,. '^" ? ?k^l 0.092 w/k ^"-- ? . ' ^t^^-i continuous operation ^^~1-^^^ ! ! ^^~-- 50 th(oc) 100 fig. 3 r.f. power dissipation. thermal resistance from junction to mounting base from mounting base to heatsink rthj-mb rth mb-h 10,3 k/vv 0,6 k/w
characteristics tj = 25 "c breakdown voltages collector-emitter voltage vbe = o; lc = 10ma v(br)ces > 36 v collector-emitter voltage open base; iq = 50 ma vjbrjceo > 17v emitter-base voltage open collector; ie = 4 ma vjbrjebo > 4v collector cut-off current vbe = 0; vce=17v ices < 4 ma d.c. current gain (1) > 10 lc = 0,5a;vce,5v hfe typ ^ collector-emitter saturation voltage tr> lc= 1,5 a; ib = 0,3 a vcesat typ 0,75v transition frequency at f = 500 mhz 0) ic=0,5a;vce= 12,5v ft typ 1,75 ghz \c= 1,5 a; vce = 12,5v ft typ 1,25 ghz collector capacitance atf = 1 mhz ie = le = 0;vcb= 12,5v cc typ 14 pf feedback capacitance at f = 1 mhz lc = 40ma;vce= 12,5v cre typ 7,1 pf collector-stud capacitance ccs typ 1,2 pf note 1. measured under pulse conditions: tp < 200 |as; 8 < 0,02.
^ o r + ? n1 ? i ! t ?^ ? i l -^~ x / \ [ -c -c " 3 1 7 ? tor ^ ?' ?^ 4 -*- \ ceramic /be 1 / metal t ?^ c - |a| h?1w1?ia \ \l x l 10mm scale dimensions (millimetre dimensions are derived from the original inch dimensions) unit a b 5.97 ! 585 4.74 i 5,58 c 018 0.14 d 750 7,23 1 648 6.22 d2 724 6.93 h 2756 25.78 l i m1 991 i 318 9.14 ' 2.66 m 1 66 1.39 n 11 82 11.04 n1 "3 max. j i 02 > 3 86 ro> i 2g2 q 338 2.74 w 8-32 unc 0.381 90
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